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Interface engineering in heterostructures at the atomic scale has been a central research focus of nanoscale and quantum material science. Despite its paramount importance, the achievement of atomically ordered heterointerfaces has been severely limited by the strong diffusive feature of interfacial atoms in heterostructures. In this work, we first report a strong dependence of interfacial diffusion on the surface polarity. Near-perfect quantum interfaces can be readily synthesized on the semipolar plane instead of the conventionalc-plane of GaN/AlN heterostructures. The chemical bonding configurations on the semipolar plane can significantly suppress the cation substitution process as evidenced by first-principles calculations, which leads to an atomically sharp interface. Moreover, the surface polarity of GaN/AlN can be readily controlled by varying the strain relaxation process in core–shell nanostructures. The obtained extremely confined, interdiffusion-free ultrathin GaN quantum wells exhibit a high internal quantum efficiency of ~75%. Deep ultraviolet light-emitting diodes are fabricated utilizing a scalable and robust method and the electroluminescence emission is nearly free of the quantum-confined Stark effect, which is significant for ultrastable device operation. The presented work shows a vital path for achieving atomically ordered quantum heterostructures for III-nitrides as well as other polar materials such as III-arsenides, perovskites, etc.

 

Ambipolar dual-gate transistors based on low-dimensional materials, such as graphene, carbon nanotubes, black phosphorus, and certain transition metal dichalcogenides (TMDs), enable reconfigurable logic circuits with a suppressed off-state current. These circuits achieve the same logical output as complementary metal–oxide semiconductor (CMOS) with fewer transistors and offer greater flexibility in design. The primary challenge lies in the cascadability and power consumption of these logic gates with static CMOS-like connections. In this article, high-performance ambipolar dual-gate transistors based on tungsten diselenide (WSe2) are fabricated. A high on–off ratio of 108 and 106, a low off-state current of 100 to 300 fA, a negligible hysteresis, and an ideal subthreshold swing of 62 and 63 mV/dec are measured in the p- and n-type transport, respectively. We demonstrate cascadable and cascaded logic gates using ambipolar TMD transistors with minimal static power consumption, including inverters, XOR, NAND, NOR, and buffers made by cascaded inverters. A thorough study of both the control gate and the polarity gate behavior is conducted. The noise margin of the logic gates is measured and analyzed. The large noise margin enables the implementation of VT-drop circuits, a type of logic with reduced transistor number and simplified circuit design. Finally, the speed performance of the VT-drop and other circuits built by dual-gate devices is qualitatively analyzed. This work makes advancements in the field of ambipolar dual-gate TMD transistors, showing their potential for low-power, high-speed, and more flexible logic circuits. 

The highly active family of Mutator (Mu) DNA transposons has been widely used for forward and reverse genetics in maize. There are examples of Mu-suppressible alleles that result in conditional phenotypic effects based on the activity of Mu. Phenotypes from these Mu-suppressible mutations are observed in Mu-active genetic backgrounds, but absent when Mu activity is lost. For some Mu-suppressible alleles, phenotypic suppression likely results from an outward-reading promoter within Mu that is only active when the autonomous Mu element is silenced or lost. We isolated 35 Mu alleles from the UniformMu population that represent insertions in 24 different genes. Most of these mutant alleles are due to insertions within gene coding sequences, but several 5′ UTR and intron insertions were included. RNA-seq and de novo transcript assembly were utilized to document the transcripts produced from 33 of these Mu insertion alleles. For 20 of the 33 alleles, there was evidence of transcripts initiating within the Mu sequence reading through the gene. This outward-reading promoter activity was detected in multiple types of Mu elements and does not depend on the orientation of Mu. Expression analyses of Mu-initiated transcripts revealed the Mu promoter often provides gene expression levels and patterns that are similar to the wild-type gene. These results suggest the Mu promoter may represent a minimal promoter that can respond to gene cis-regulatory elements. Findings from this study have implications for maize researchers using the UniformMu population, and more broadly highlight a strategy for transposons to co-exist with their host.

 

Here, we discuss a model for the quasi-static magnetoelectric (ME) interaction in three-layer composites consisting of a single piezoelectric (PE) layer and two magnetostrictive (MS) layers with positive and negative magnetostriction. Two types of layer arrangements are considered: Type 1: a sandwich structure with the PE layer between the two MS layers and Type 2: the two MS layers form the adjacent layers. Expressions for the ME response are obtained using the system of equations of elasto- and electrostatics for the PE and MS phases. The contributions from longitudinal and bending vibrations to the net ME response are considered. The theory is applied for trilayers consisting of lead zirconate titanate (PZT), nickel for negative magnetostriction, and Metglas for positive magnetostriction. Estimates of the dependence of the strength of the ME response on the thickness of the three layers are provided. It is shown that the asymmetric three-layer structures of both types lead to an increase in the strength of ME interactions by almost an order of magnitude compared to a two-layer piezoelectric-magnetostrictive structure. The model predicts a much stronger ME response in Type 2 structures than in Type 1. The theory discussed here is of importance for designing composites for applications such as magnetic field sensors, gyrators, and energy harvesters. 

Abstract This work focuses on the nature of magnetic anisotropy in 2.5–16 micron thick films of nickel ferrite (NFO) grown by liquid phase epitaxy (LPE). The technique, ideal for rapid growth of epitaxial oxide films, was utilized for films on (100) and (110) substrates of magnesium gallate (MGO). The motivation was to investigate the dependence of the growth induced anisotropy field on film thickness since submicron films of NFO were reported to show a very high anisotropy. The films grown at 850–875 C and subsequently annealed at 1000 C were found to be epitaxial, with the out-of-plane lattice constant showing unanticipated decrease with increasing film thickness and the estimated in-plane lattice constant increasing with the film thickness. The uniaxial anisotropy field H σ , estimated from X-ray diffraction data, ranged from 2.8–7.7 kOe with the films on (100) MGO having a higher H σ value than for the films on (110) MGO. Ferromagnetic resonance (FMR) measurements for in-plane and out-of-plane static magnetic field were utilized to determine both the magnetocrystalline the anisotropy field H 4 and the uniaxial anisotropy field H a . Values of H 4 range from −0.24 to −0.86 kOe. The uniaxial anisotropy field H a was an order of magnitude smaller than H σ and it decreased with increasing film thickness for NFO films on (100) MGO, but H a increased with film thickness for films on (110) MGO substrates. These observations indicate that the origin of the induced anisotropy could be attributed to several factors including (i) strain due to mismatch in the film-substrate lattice constants, (ii) possible variations in the bond lengths and bond angles in NFO during the growth process, and (iii) the strain arising from mismatch in the thermal expansion coefficients of the film and the substrate due to the high growth and annealing temperatures involved in the LPE technique. The LPE films of NFO on MGO substrates studied in this work are of interest for use in high frequency devices. 

This report is on the nature of strain in thin films of yttrium iron garnet (YIG) on yttrium aluminum garnet (YAG) substrates due to film-substrate lattice mismatch and the resulting induced magnetic anisotropy. Films with thickness 55 nm to 380 nm were deposited on (100), (110), and (111) YAG substrates using pulsed laser deposition (PLD) techniques and characterized by structural and magnetic characterization techniques. The in-plane strain determined to be compressive using X-ray diffraction (XRD). It varied from −0.12% to −0.98% and increased in magnitude with increasing film thickness and was relatively large in films on (100) YAG. The out-of-plane strain was tensile and also increased with increasing film thickness. The estimated strain-induced magnetic anisotropy field, found from XRD data, was out of plane; its value increased with film thickness and ranged from 0.47 kOe to 3.96 kOe. Ferromagnetic resonance (FMR) measurements at 5 to 21 GHz also revealed the presence of a perpendicular magnetic anisotropy that decreased with increasing film thickness and its values were smaller than values obtained from XRD data. The PLD YIG films on YAG substrates exhibiting a perpendicular anisotropy field have the potential for use in self-biased sensors and high-frequency devices. 

In unconventional reservoirs, optimal completion controls are essential to improving well productivity and reducing costs. In this article, we propose a statistical model to investigate associations between shale oil production and completion parameters (e.g., completion lateral length, total proppant, number of hydraulic fracturing stages), while accounting for the influence of spatially heterogeneous geological conditions on hydrocarbon production. We develop a non-parametric regression method that combines a generalized additive model with a fused LASSO regularization for geological homogeneity pursuit. We present an alternating augmented Lagrangian method for model parameter estimations. The novelty and advantages of our method over the published ones are a) it can control or remove the heterogeneous non-completion effects; 2) it can account for and analyze the interactions among the completion parameters. We apply our method to the analysis of a real case from a Permian Basin US onshore field and show how our model can account for the interaction between the completion parameters. Our results provide key findings on how completion parameters affect oil production in that can lead to optimal well completion designs.