Search for: All records

Composites of ferromagnetic and ferroelectric phases are of interest for studies on mechanical strain-mediated coupling between the two phases and for a variety of applications in sensors, energy harvesting, and high-frequency devices. Nanocomposites are of particular importance since their surface area-to-volume ratio, a key factor that determines the strength of magneto-electric (ME) coupling, is much higher than for bulk or thin-film composites. Core–shell nano- and microcomposites of the ferroic phases are the preferred structures, since they are free of any clamping due to substrates that are present in nanobilayers or nanopillars on a substrate. This review concerns recent efforts on ME coupling in coaxial fibers of spinel or hexagonal ferrites for the magnetic phase and PZT or barium titanate for the ferroelectric phase. Several recent studies on the synthesis and ME measurements of fibers with nickel ferrite, nickel zinc ferrite, or cobalt ferrite for the spinel ferrite and M-, Y-, and W-types for the hexagonal ferrites were considered. Fibers synthesized by electrospinning were found to be free of impurity phases and had uniform core and shell structures. Piezo force microscopy (PFM) and scanning microwave microscopy (SMM) measurements of strengths of direct and converse ME effects on individual fibers showed evidence for strong coupling. Results of low-frequency ME voltage coefficient and magneto-dielectric effects on 2D and 3D films of the fibers assembled in a magnetic field, however, were indicative of ME couplings that were weaker than in bulk or thick-film composites. A strong ME interaction was only evident from data on magnetic field-induced variations in the remnant ferroelectric polarization in the discs of the fibers. Follow-up efforts aimed at further enhancement in the strengths of ME coupling in core–shell composites are also discussed in this review. 

Abstract Current potentiometric sensing methods are limited to detecting nitrate at parts-per-billion (sub-micromolar) concentrations, and there are no existing potentiometric chemical sensors with ultralow detection limits below the parts-per-trillion (picomolar) level. To address these challenges, we integrate interdigital graphene ion-sensitive field-effect transistors (ISFETs) with a nitrate ion-sensitive membrane (ISM). The work aims to maximize nitrate ion transport through the nitrate ISM, while achieving high device transconductance by evaluating graphene layer thickness, optimizing channel width-to-length ratio (R_WL), and enlarging total sensing area. The captured nitrate ions by the nitrate ISM induce surface potential changes that are transduced into electrical signals by graphene, manifested as the Dirac point shifts. The device exhibits Nernst response behavior under ultralow concentrations, achieving a sensitivity of 28 mV/decade and establishing a record low limit of detection of 0.041 ppt (4.8 × 10⁻¹³M). Additionally, the sensor showed a wide linear detection range from 0.1 ppt (1.2 × 10⁻¹²M) to 100 ppm (1.2 × 10⁻³M). Furthermore, successful detection of nitrate in tap and snow water was demonstrated with high accuracy, indicating promising applications to drinking water safety and environmental water quality control. 

Interface engineering in heterostructures at the atomic scale has been a central research focus of nanoscale and quantum material science. Despite its paramount importance, the achievement of atomically ordered heterointerfaces has been severely limited by the strong diffusive feature of interfacial atoms in heterostructures. In this work, we first report a strong dependence of interfacial diffusion on the surface polarity. Near-perfect quantum interfaces can be readily synthesized on the semipolar plane instead of the conventionalc-plane of GaN/AlN heterostructures. The chemical bonding configurations on the semipolar plane can significantly suppress the cation substitution process as evidenced by first-principles calculations, which leads to an atomically sharp interface. Moreover, the surface polarity of GaN/AlN can be readily controlled by varying the strain relaxation process in core–shell nanostructures. The obtained extremely confined, interdiffusion-free ultrathin GaN quantum wells exhibit a high internal quantum efficiency of ~75%. Deep ultraviolet light-emitting diodes are fabricated utilizing a scalable and robust method and the electroluminescence emission is nearly free of the quantum-confined Stark effect, which is significant for ultrastable device operation. The presented work shows a vital path for achieving atomically ordered quantum heterostructures for III-nitrides as well as other polar materials such as III-arsenides, perovskites, etc. 

Ambipolar dual-gate transistors based on low-dimensional materials, such as graphene, carbon nanotubes, black phosphorus, and certain transition metal dichalcogenides (TMDs), enable reconfigurable logic circuits with a suppressed off-state current. These circuits achieve the same logical output as complementary metal–oxide semiconductor (CMOS) with fewer transistors and offer greater flexibility in design. The primary challenge lies in the cascadability and power consumption of these logic gates with static CMOS-like connections. In this article, high-performance ambipolar dual-gate transistors based on tungsten diselenide (WSe2) are fabricated. A high on–off ratio of 108 and 106, a low off-state current of 100 to 300 fA, a negligible hysteresis, and an ideal subthreshold swing of 62 and 63 mV/dec are measured in the p- and n-type transport, respectively. We demonstrate cascadable and cascaded logic gates using ambipolar TMD transistors with minimal static power consumption, including inverters, XOR, NAND, NOR, and buffers made by cascaded inverters. A thorough study of both the control gate and the polarity gate behavior is conducted. The noise margin of the logic gates is measured and analyzed. The large noise margin enables the implementation of VT-drop circuits, a type of logic with reduced transistor number and simplified circuit design. Finally, the speed performance of the VT-drop and other circuits built by dual-gate devices is qualitatively analyzed. This work makes advancements in the field of ambipolar dual-gate TMD transistors, showing their potential for low-power, high-speed, and more flexible logic circuits. 

Abstract The highly active family of Mutator (Mu) DNA transposons has been widely used for forward and reverse genetics in maize. There are examples of Mu-suppressible alleles that result in conditional phenotypic effects based on the activity of Mu. Phenotypes from these Mu-suppressible mutations are observed in Mu-active genetic backgrounds, but absent when Mu activity is lost. For some Mu-suppressible alleles, phenotypic suppression likely results from an outward-reading promoter within Mu that is only active when the autonomous Mu element is silenced or lost. We isolated 35 Mu alleles from the UniformMu population that represent insertions in 24 different genes. Most of these mutant alleles are due to insertions within gene coding sequences, but several 5′ UTR and intron insertions were included. RNA-seq and de novo transcript assembly were utilized to document the transcripts produced from 33 of these Mu insertion alleles. For 20 of the 33 alleles, there was evidence of transcripts initiating within the Mu sequence reading through the gene. This outward-reading promoter activity was detected in multiple types of Mu elements and does not depend on the orientation of Mu. Expression analyses of Mu-initiated transcripts revealed the Mu promoter often provides gene expression levels and patterns that are similar to the wild-type gene. These results suggest the Mu promoter may represent a minimal promoter that can respond to gene cis-regulatory elements. Findings from this study have implications for maize researchers using the UniformMu population, and more broadly highlight a strategy for transposons to co-exist with their host. 

Here, we discuss a model for the quasi-static magnetoelectric (ME) interaction in three-layer composites consisting of a single piezoelectric (PE) layer and two magnetostrictive (MS) layers with positive and negative magnetostriction. Two types of layer arrangements are considered: Type 1: a sandwich structure with the PE layer between the two MS layers and Type 2: the two MS layers form the adjacent layers. Expressions for the ME response are obtained using the system of equations of elasto- and electrostatics for the PE and MS phases. The contributions from longitudinal and bending vibrations to the net ME response are considered. The theory is applied for trilayers consisting of lead zirconate titanate (PZT), nickel for negative magnetostriction, and Metglas for positive magnetostriction. Estimates of the dependence of the strength of the ME response on the thickness of the three layers are provided. It is shown that the asymmetric three-layer structures of both types lead to an increase in the strength of ME interactions by almost an order of magnitude compared to a two-layer piezoelectric-magnetostrictive structure. The model predicts a much stronger ME response in Type 2 structures than in Type 1. The theory discussed here is of importance for designing composites for applications such as magnetic field sensors, gyrators, and energy harvesters.